linear & power amplifiers - chip 3 3 - 208 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas hemt mmic medium power amplifier, 16 - 33 ghz v02.0208 general description features functional diagram output ip3: +33 dbm p1db: +24 dbm gain: 17 db supply voltage: +5v 50 ohm matched input/output die size: 2.55 x 1.87 x 0.1 mm typical applications this HMC-APH596 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat ? military & space the HMC-APH596 is a two stage gaas hemt mmic medium power ampli er which operates between 16 and 33 ghz. the HMC-APH596 provides 17 db of gain, and an output power of +24 dbm at 1 db compression from a +5v supply voltage. all bond pads and the die backside are ti/au metallized and the ampli er device is fully passivated for reliable operation. the HMC-APH596 gaas hemt mmic medium power ampli er is compatible with conven- tional die attach methods, as well as thermocomp- ression and thermosonic wirebonding, making it ideal for mcm and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. HMC-APH596 electrical speci cations , t a = +25 c, vdd1=vdd2 = 5v, idd1+idd2 = 400 ma [2] parameter min. typ. max. units frequency range 16 - 33 ghz gain 16 17 db input return loss 17 db output return loss 18 db output power for 1db compression (p1db) 24 dbm output third order intercept (ip3) 33 dbm supply current (idd1+idd2) 400 ma [1] unless otherwise indicated, all measurements are from probed die [2] adjust vgg1=vgg2 between -1v to +0.3v (typ -0.5v) to achieve idd total = 400 ma
linear & power amplifiers - chip 3 3 - 209 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC-APH596 v02.0208 gaas hemt mmic medium power amplifier, 16 - 33 ghz fixtured pout vs. frequency output return loss vs. frequency gain vs. frequency input return loss vs. frequency 10 12 14 16 18 20 22 24 12 16 20 24 28 32 36 gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 12 16 20 24 28 32 36 return loss (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 12 16 20 24 28 32 36 return loss (db) frequency (ghz) 20 24 28 32 36 16 20 24 28 32 36 p1db p3db ip3 @ 18dbm/tone pout (dbm) frequency (ghz)
linear & power amplifiers - chip 3 3 - 210 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC-APH596 v02.0208 gaas hemt mmic medium power amplifier, 16 - 33 ghz outline drawing absolute maximum ratings electrostatic sensitive device observe handling precautions notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 drain bias voltage +5.5 vdc gate bias voltage -1 to +0.3 vdc rf input 6 dbm thermal resistance (channel to die bottom) 56.6 c/w channel temperature 180 c storage temperature -65 c to +150 c drain bias current (idd1) 180 ma drain bias current (idd2) 290 ma die packaging information [1] standard alternate gp-1 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
linear & power amplifiers - chip 3 3 - 211 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2rfout this pad is ac coupled and matched to 50 ohms. 5vdd1 power supply voltage for the ampli er. see assembly for required external components. 3vdd2 power supply voltage for the ampli er. see assembly for required external components. 6vgg1 gate control for the ampli er. please follow mmic ampli- er biasing procedure application note. see assembly for required external components. 4vgg2 gate control for ampli er. please follow mmic ampli er bias- ing procedure application note. see assembly for required external components. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions HMC-APH596 v02.0208 gaas hemt mmic medium power amplifier, 16 - 33 ghz
linear & power amplifiers - chip 3 3 - 212 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com note 1: bypass caps should be 100 pf (approximately) ceramic (single-layer) placed no farther than 30 mils from the ampli er note 2: best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. assembly diagram HMC-APH596 v02.0208 gaas hemt mmic medium power amplifier, 16 - 33 ghz
linear & power amplifiers - chip 3 3 - 213 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic ribbon bond 0.076mm (0.003?) rf ground plane 0.127mm (0.005?) thick alumina thin film substrate figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond 0.076mm (0.003?) rf ground plane 0.150mm (0.005?) thick moly tab 0.254mm (0.010? thick alumina thin film substrate figure 2. HMC-APH596 v02.0208 gaas hemt mmic medium power amplifier, 16 - 33 ghz
|
